Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jun Hu Xiaobin Xin, Petre Alexandrov, Jian H. Zhao, Brenda VanMil, D. Kurt Gaskill, Kok-Keong Lew, Rachael Myers-Ward, and Charles Eddy, Jr., 3) 1) SiCLAB, ECE Dept., Rutgers University, 94 Brett Road, Piscataway, NJ 08854, USA, [email protected] 2) United Silicon Carbide, Inc., 100 Jersey Ave., BLDG A, New Brunswick, NJ 08901, USA 3) Naval Research Laboratory, Code 6882, 4555 Overlook Ave ...

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

Both Pand N-channel MOSFETs with Schottky barrier silicide source/drain (S/D), high-K gate dielectric and metal gate were successfully fabricated using a simplified low temperature process. The highest temperature after the high-K dielectric formation is 420 C. PMOSFETs with PtSi S/D show excellent electrical performance of an Ion=Ioff 10 10 and a subthreshold slope of 66 mV/dec, similar to tho...

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Avalanche robustness of SiC Schottky diode

Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in th...

Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

A lateral trench-gate power metal-oxidesemiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of Pbody region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the perform...